Kioxia and Sandisk have begun sampling their 10th Generation BiCS 3D NAND, featuring 332 active layers which deliver a 59% increase in bit density. This new NAND is targeted at data center applications to enhance performance and reduce energy consumption.
Kioxia and Sandisk have launched the sampling phase of their latest 3D NAND memory, the 10th Generation BiCS, featuring an innovative architecture of 332 active layers. This new technology is claimed to rival and surpass Samsung’s V10-class 3D NAND in storage density, focusing primarily on data center applications rather than consumer devices.
The BiCS10 NAND is engineered for high-density performance, achieving over 29 Gb/mm² in density and a data transfer rate of 4,800 MT/s. These capabilities are crucial for data center SSDs utilizing PCIe 5.0 and 6.0 interfaces, setting the stage for enhanced data handling efficiency.
Kioxia reports that the new design yields significant operational advantages, including a 10% reduction in read latency and a 25% decrease in read energy consumption (from 100 mJ/GB to 75 mJ/GB). These improvements are attributed to a redesigned read scheme that optimizes how unselected word lines are managed during operations.
Unlike its predecessors, the BiCS10 NAND is not marketed towards consumer devices, with Kioxia specifically targeting enterprise-grade solutions. Whether version 10 will transition to high-performance consumer SSDs will depend largely on market demand.
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Kioxia and Sandisk have begun sampling their 10th Generation BiCS 3D NAND, featuring 332 active layers which deliver a 59% increase in bit density. This new NAND is targeted at data center applications to enhance performance and reduce energy consumption.