CXMT, a Chinese DRAM manufacturer, has initiated mass production of its 5th-generation DRAM process technology, designated as G5. This development signifies a step forward in the company's manufacturing capabilities for memory chips.
The G5 process utilizes quadruple-patterning lithography to achieve an active-area half-pitch of 11.95nm. This dimension places it in the range of other advanced 10nm-class DRAM technologies, though it is not a direct node designation. CXMT also implemented an optimized high-K metal gate (HKMG) process, reducing the core cell array height to 6,762nm. Additionally, the company modified its process flow and introduced new materials to create storage capacitors with a depth-to-width aspect ratio of approximately 45:1.
The first products to be mass-produced using the G5 technology are 24Gb LPDDR5X devices. These chips offer a 50% increase in capacity compared to CXMT's previous comparable products. They are available in two package formats designed for various mobile devices and are reportedly being integrated into mainstream Chinese flagship smartphones.
It is important to note that CXMT's 11.95nm figure refers to the active-area half-pitch, not a conventional process node. While the physical dimensions are notable, they do not automatically imply technological parity with the latest DRAM processes from global leaders like Micron, Samsung, and SK hynix. Factors such as density, capacitor scaling, transistor characteristics, power consumption, and manufacturing yields are crucial for overall competitiveness. CXMT states that G5 provides at least 50% more gross dies per wafer than its G4 process.
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China's CXMT has started mass production using its 5th-generation (G5) DRAM process technology, which employs quadruple-patterning lithography to achieve an 11.95nm active-area half-pitch. This new process enables 24Gb LPDDR5X devices with 50% more capacity than previous CXMT products, marking a significant advancement in China's domestic DRAM manufacturing capabilities.