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CXMT Begins Mass Production of 5th-Gen DRAM with Quadruple-Patterning Technology

🔄 Updated 1d ago
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Key points

  • CXMT began mass production of its G5 DRAM process technology.
  • G5 uses quadruple-patterning lithography for an 11.95nm active-area half-pitch.
  • The process enables 24Gb LPDDR5X devices with 50% increased capacity.
  • These 24Gb LPDDR5X chips are entering Chinese flagship smartphones.

CXMT's G5 DRAM Process Enters Production

CXMT, a Chinese DRAM manufacturer, has initiated mass production of its 5th-generation DRAM process technology, designated as G5. This development signifies a step forward in the company's manufacturing capabilities for memory chips.

Technical Specifications of G5

The G5 process utilizes quadruple-patterning lithography to achieve an active-area half-pitch of 11.95nm. This dimension places it in the range of other advanced 10nm-class DRAM technologies, though it is not a direct node designation. CXMT also implemented an optimized high-K metal gate (HKMG) process, reducing the core cell array height to 6,762nm. Additionally, the company modified its process flow and introduced new materials to create storage capacitors with a depth-to-width aspect ratio of approximately 45:1.

Increased Capacity and Product Availability

The first products to be mass-produced using the G5 technology are 24Gb LPDDR5X devices. These chips offer a 50% increase in capacity compared to CXMT's previous comparable products. They are available in two package formats designed for various mobile devices and are reportedly being integrated into mainstream Chinese flagship smartphones.

Context and Caveats

It is important to note that CXMT's 11.95nm figure refers to the active-area half-pitch, not a conventional process node. While the physical dimensions are notable, they do not automatically imply technological parity with the latest DRAM processes from global leaders like Micron, Samsung, and SK hynix. Factors such as density, capacitor scaling, transistor characteristics, power consumption, and manufacturing yields are crucial for overall competitiveness. CXMT states that G5 provides at least 50% more gross dies per wafer than its G4 process.

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Reporting from

China's CXMT has started mass production using its 5th-generation (G5) DRAM process technology, which employs quadruple-patterning lithography to achieve an 11.95nm active-area half-pitch. This new process enables 24Gb LPDDR5X devices with 50% more capacity than previous CXMT products, marking a significant advancement in China's domestic DRAM manufacturing capabilities.