GlobalFoundries is re-entering the 7nm-class performance arena with its FDX Fusion process, eight years after discontinuing its 7nm FinFET development. This new approach leverages FD-SOI (fully depleted silicon-on-insulator) technology to achieve performance comparable to 7nm nodes.
Sudipto Bose, VP of GlobalFoundries' FD-SOI business unit, provided details on FDX Fusion. The technology features 8nm-class logic density and employs advanced planar transistors. A key aspect is its ability to achieve these performance metrics without the need for EUV lithography tools, potentially impacting manufacturing costs and accessibility.
GlobalFoundries aims to begin commercial production of FDX Fusion in 2028, with high-volume manufacturing targeted for 2030. The company intends for FDX Fusion to compete with conventional FinFET technologies by offering a different path to advanced performance, building on its existing investment and market traction in FD-SOI.
FDX Fusion is designed to serve applications in connectivity, including Wi-Fi, Bluetooth, cellular, and satcom. Additionally, it targets edge processors such as microcontroller units (MCUs) that incorporate some level of inference capabilities. These applications align with GlobalFoundries' current customer base and strategic focus.
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GlobalFoundries is developing FDX Fusion, a new FD-SOI process technology that aims to deliver 7nm-class performance using planar transistors, without requiring EUV lithography. The company plans for commercial production to begin in 2028, targeting high-volume manufacturing by 2030, and intends for FDX Fusion to serve connectivity and edge processor applications.