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Infineon Processes First Functional Power Devices on 300mm Silicon Carbide Wafers
Key points
- Infineon processed functional power devices on 300mm SiC wafers.
- This was achieved at its Villach fab using existing silicon equipment.
- 300mm wafers produce 2.3 times more chips than 200mm wafers.
- The technology will be presented at electronica trade show in 2026.
Industry First in SiC Manufacturing
Infineon Technologies AG has announced the successful processing of functional power devices on 300-millimeter silicon carbide (SiC) wafers. This milestone was achieved at the company's fab in Villach, Austria, making Infineon the first to accomplish this in a full-scale semiconductor manufacturing environment. The process utilized existing silicon (Si) manufacturing equipment.
Efficiency and Supply Implications
The transition to 300-millimeter wafers is significant for SiC production efficiency. Larger 300mm wafers offer 2.3 times more chips per wafer compared to the current 200mm standard. This technological advancement is expected to provide a more secure and cost-effective supply of SiC power semiconductors for customers in automotive, renewable energy, industrial, and AI data center applications.
Future Outlook and Presentation
Infineon plans to collaborate with customers and partners to define the ramp timing for 300-millimeter SiC technology, while continuing its 200-millimeter SiC manufacturing roadmap. The company will publicly present the first processed 300-millimeter SiC wafer at the electronica trade show, scheduled to begin on November 10, 2026, in Munich.
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Reporting from
Infineon Technologies has successfully processed functional power devices on 300-millimeter silicon carbide (SiC) wafers, marking an industry first. This achievement, utilizing existing silicon manufacturing equipment, lays the groundwork for more efficient SiC chip production, as 300mm wafers yield 2.3 times more chips than 200mm wafers.