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Kioxia and Sandisk Unveil BiCS10 3D QLC NAND with Record 37 Gb/mm2 Areal Density
Key points
- BiCS10 3D QLC NAND has 37 Gb/mm2 areal density.
- The device features 332 active layers.
- It includes a 4,800 MT/s interface.
- Power-isolated low-tapped termination (PI-LTT) reduces power consumption.
Record-Breaking Density Achieved
Kioxia and Sandisk formally introduced their BiCS10 3D QLC NAND device at the Future of Memory and Storage Conference. This new device achieves an areal density of 37 Gb/mm2, making it the densest 3D NAND storage device publicly announced to date. It surpasses their previous BiCS 3D TLC NAND device, which offered over 29 Gb/mm2.
Technical Specifications and Potential Capacity
The BiCS10 3D QLC NAND features 332 active layers and an interface speed of up to 4,800 MT/s with separate command address (SCA) capability. While the manufacturers did not disclose the exact capacity, it is estimated to be around 1.33 Tb, based on comparisons with the 1Tb BiCS10 3D TLC NAND chip.
Targeting Data Center Applications
This new flash IC is designed for high-capacity data center-grade solid-state drives (SSDs) that require both high storage density and performance. Kioxia and Sandisk have also integrated their power-isolated low-tapped termination (PI-LTT) technique to reduce power consumption of high-speed output drivers without compromising signal integrity, which is crucial for data center environments.
Cost Efficiency and Market Impact
The BiCS10 3D QLC NAND device is produced using the latest BiCS10 process technology, which is expected to lower manufacturing costs compared to competing high-density 3D QLC NAND ICs once production yields stabilize. This could enable Kioxia and Sandisk to offer ultra-high-capacity SSDs at more competitive prices or achieve higher profit margins.
✨ This summary was generated by AI from the outlets' reporting listed below. It is not independently verified and may contain errors — check the original sources. How BrevFeed works →
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Reporting from
Kioxia and Sandisk introduced their BiCS10 3D QLC NAND device, featuring the world's highest areal density at 37 Gb/mm2 and 332 active layers. This development provides higher capacity and improved power efficiency for data center SSDs, potentially lowering costs for high-capacity storage solutions.