Chinese Startup Langdao Silex Demos 15W EUV Light Source Prototype with 90% Domestic Components

Prototype EUV Light Source Demonstrated

Langdao Silex, a Chinese startup, showcased a prototype extreme ultraviolet (EUV) light source at the 26th China International Industry Fair in Shanghai. The system, named FlintNano LPP-OXXO, achieved an output power exceeding 15W and utilized over 90% domestically sourced components. This demonstration marks a step in China's efforts to develop indigenous EUV technology.

The company, founded by alumni of Tsinghua University's Gas Discharge Plasma Laboratory in 2024, employs laser-produced plasma (LPP) technology. This method generates EUV radiation by using high-energy laser pulses to bombard heated metal droplets, creating hot plasma. The system incorporates a 1,000W driving laser with an operating frequency of 1 kHz – 20 kHz and a conversion efficiency over 2%.

Performance and Specifications

The FlintNano LPP-OXXO prototype's EUV output exceeds 15W, with a brightness of 100 W/(mm²·sr) and an étendue of 1 × 10⁻³ mm²·sr. It generates plasma with a diameter of 60 µm. The system is capable of continuous operation for over 100 hours, maintaining plasma stability at 3% RMS and EUV output power stability at 5%.

These specifications indicate the system's suitability for semiconductor exposure experiments. However, its current output power is not sufficient for high-volume chip production. Langdao Silex also stated they are developing a higher-power EUV source, FlintMicro-LPP, which has completed proof-of-principle validation, though specific performance details were not disclosed.

Context and Future Outlook

The development of this EUV light source is part of China's broader strategy to overcome restrictions on acquiring advanced lithography tools from companies like ASML. The ability to produce key components domestically is crucial for this goal. Langdao Silex anticipates needing another three to five years to commercialize its technology.

While the light source is a critical component, it is only one part of a complete EUV scanner. The demonstrated output power is comparable to early EUV sources developed by Western and Japanese equipment manufacturers. This prototype represents progress in China's domestic semiconductor equipment industry.