GlobalFoundries Unveils 7nm-Class FDX Fusion Node for Low-Power Applications

Return to Advanced Node Development

GlobalFoundries has unveiled FDX Fusion, a new 7nm-class manufacturing process. This development signifies the company's re-entry into advanced node fabrication, nearly eight years after it ceased development of 7nm-class FinFET technology in 2018. Unlike its previous FinFET efforts, FDX Fusion utilizes planar transistors and fully-depleted silicon-on-insulator (FD-SOI) technology.

Target Applications and Benefits

The FDX Fusion node is specifically designed for applications requiring low power consumption, high integration, and cost efficiency. Key target markets include automotive, edge AI, industrial, robotics, and sensor devices. This approach contrasts with nodes focused solely on maximum performance, catering to a different segment of the semiconductor industry.

FDX Fusion is expected to support highly integrated chips capable of processing sensor data, executing AI inference, controlling external devices, and enabling wireless communication without needing multiple separate integrated circuits.

Technological Advancements

FDX Fusion promises 7nm-class 'digital performance' and more than double the transistor density compared to GlobalFoundries' original 22FDX process, introduced around 2015. The first generation of FDX Fusion incorporates innovations in SOI substrates, transistor structures, and back-end interconnects. GlobalFoundries has not yet disclosed specific transistor dimensions, contacted gate pitch, minimum metal pitch, or actual transistor density figures.

Beyond digital performance, the new node will support RF transistors with fT/fmax up to 0.5 THz, analog and mixed-signal circuitry, embedded nonvolatile memory, and in-memory computing capabilities. GlobalFoundries also plans to offer processor IP based on MIPS, ARC, and RISC-V architectures to facilitate product development.

Production Timeline and Location

GlobalFoundries intends to begin production of chips using FDX Fusion at its Dresden, Germany, facility in 2028. This move marks a significant shift, as the company has spent years enhancing its existing 22nm-class platform rather than developing substantially more advanced FD-SOI fabrication processes.