SMIC's third-generation 7nm technology demonstrates higher transistor density than TSMC's N6 without EUV, achieving 113.4 million transistors per square millimeter. However, the Kirin 9030's performance lags behind modern competitors, indicating challenges in matching overall process competitiveness.
SMIC has introduced its third-generation 7nm-class fabrication technology, known as N+3. An analysis by SemiAnalysis highlighted that this technology achieves a metal pitch of 32.5nm, which is tighter than Intel's Panther Lake CPU's pitch of approximately 36nm, representing a notable achievement in semiconductor manufacturing.
The analysis revealed that SMIC's N+3 node has a transistor density of 113.4 million transistors per square millimeter. This figure surpasses TSMC's N6, which has a density of 107.7 Mtr/mm2. Notably, SMIC accomplished this without employing EUV lithography, relying instead on advanced DUV multi-patterning techniques.
The ability to achieve high transistor density via DUV multi-patterning indicates a significant advancement for SMIC. However, the complexity of the process, including techniques such as reduced fin counts and tighter cell isolation, brings potential challenges like increased costs and yield risks.
Despite the promising fabrication technology, the Kirin 9030 SoC does not deliver performance on par with current flagship processors. Its performance aligns more closely with top-tier chips from three years prior, highlighting the difficulties SMIC faces in achieving competitive processing power. Moreover, its energy efficiency falls short compared to modern alternatives from key competitors like Apple and Qualcomm.
The advancements presented by SMIC's N+3 node could signify a step forward for Chinese semiconductor manufacturing, yet the inability of the Kirin 9030 to compete with leading processors demonstrates the ongoing challenges in achieving overall competitiveness and performance in the semiconductor market. The implications for the tech industry are significant as SMIC continues to develop its capabilities in a landscape dominated by established players.
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SMIC's third-generation 7nm technology demonstrates higher transistor density than TSMC's N6 without EUV, achieving 113.4 million transistors per square millimeter. However, the Kirin 9030's performance lags behind modern competitors, indicating challenges in matching overall process competitiveness.