Samsung Foundry presented an updated fabrication technologies roadmap at the 2026 Next-Generation Lithography + Patterning Conference (NGL 2026). The revised roadmap shows significant changes compared to the 2024 version, particularly regarding the timeline for advanced nodes.
The introduction of Samsung's SF1.4 node (1.4nm-class) has been postponed from 2027 to 2029. This delay allows Samsung to concentrate resources on refining its SF2 (2nm-class) manufacturing processes over the next three years. The company aims to enhance the commercial competitiveness of its SF2 family in terms of yields and volumes, partly influenced by a long-term supply agreement with Tesla for AI5 and AI6 processors through 2033.
Samsung confirmed its plan to adopt High-NA EUV lithography tools starting with its SF1A (1nm-class) fabrication node, which is expected around 2030. This marks the first official confirmation of this technology's integration into their roadmap. While Samsung possesses an ASML Twinscan EXE:5000 EUV lithography scanner, it is not rushing to implement High-NA EUV for its 2nm-class and 1.4nm-class technologies, citing the need for further improvements in the technology itself. Chang Min Park, Master VP of Technology at Samsung Electronics, stated that High-NA EUV will become necessary from A10 (1nm-class) and below.
The 1nm-class node is anticipated to coexist with SF1.4+, an enhanced version of SF1.4. This approach suggests Samsung will offer both an innovative 1nm-class process utilizing High-NA EUV and a technology based on established Low-NA EUV flows and materials. Additionally, a factor contributing to the extended lifespan of the SF2 series is Samsung's reported plan to finally adopt pellicles for EUV photomasks, which will necessitate adjustments to process routines and recipes for future nodes.
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Samsung Foundry updated its process roadmap, pushing its 1.4nm node (SF1.4) from 2027 to 2029 to prioritize refinement of its 2nm-class (SF2) manufacturing processes. The company confirmed it will adopt High-NA EUV lithography for its 1nm-class (SF1A) node around 2030, indicating a strategic shift in its advanced node development and adoption of new lithography technology.